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55GN01CA - RF Transistor

Features

  • High cutoff frequency : fT=5.5GHz typ.
  • High gain : ⏐S21e⏐2=9.5dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions Ratings 20 10 3 70 200 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Max.

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Datasheet Details

Part number 55GN01CA
Manufacturer ON Semiconductor
File Size 212.05 KB
Description RF Transistor
Datasheet download datasheet 55GN01CA Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1111A 55GN01CA RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single CP http://onsemi.com Features • High cutoff frequency : fT=5.5GHz typ • High gain : ⏐S21e⏐2=9.5dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions Ratings 20 10 3 70 200 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
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