6LP04MH Datasheet | onsemi

Features - 1.5V drive. P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) Ratings --60 ±10 --100 --400 0.6 150 --55 to +150 Unit V V m A m A W °C °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : QA V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf ID=--1m A, VGS=0V VDS=--60V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=--100µA VDS=--10V, ID=--50m A ID=--50m A, VGS=--4V ID=--30m A, VGS=--2.5V ID=--10m A, VGS=--1.5V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. min --60 --0.4 130 Ratings typ max Unit --1 µA ±10...