A1707 - Bipolar Transistor

Datasheet Summary

Features

Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity, wide ASO.
Fast switching speed ( )2SA1707 Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings (-.

ON Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	A1707
Manufacturer	ON Semiconductor
File Size	552.33 KB
Description	Bipolar Transistor
Datasheet	A1707 Datasheet
Additional preview pages of the A1707 datasheet.

📁 Similar Datasheet

A1707 - 2SA1707 (Sanyo Semicon Device)
A170 - SILICON RECTIFIER (Powerex Power Semiconductors)
A1701 - 2SA1701 (Sanyo)
A1703 - 2SA1703 (Sanyo)
A1704 - 2SA1704 (Sanyo Semicon Device)
A1705 - 2SA1705 (Sanyo)
A1706 - 2SA1706 (Sanyo)
A1708 - 2SA1708 (Sanyo Semicon Device)
A1709 - 2SA1709 (Sanyo)
A170R - SILICON RECTIFIER (Powerex Power Semiconductors)

Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text

Ordering number : EN3093A 2SA1707/2SC4487 Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMP http://onsemi.com Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity, wide ASO • Fast switching speed ( )2SA1707 Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings (--)60 (--)50 (--)6 (--)3 (--)6 1 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.

Published: Apr 18, 2015 |