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A2222SG - Bipolar Transistor

Download the A2222SG datasheet PDF. This datasheet also covers the A2222 variant, as both devices belong to the same bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Adoption of MBIT process.
  • Large current capacity (IC=--10A).
  • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ. )).
  • High-speed switching (tf=22ns(typ. )) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (A2222-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number A2222SG
Manufacturer onsemi
File Size 242.63 KB
Description Bipolar Transistor
Datasheet download datasheet A2222SG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENA1799B 2SA2222SG Bipolar Transistor –50V, –10A, Low VCE(sat) PNP TO-220F-3FS http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT process • Large current capacity (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.