A2222SG - Bipolar Transistor

This page provides the datasheet information for the A2222SG, a member of the A2222 Bipolar Transistor family.

Datasheet Summary

Features

Adoption of MBIT process.
Large current capacity (IC=--10A).
Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ. )).
High-speed switching (tf=22ns(typ. )) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP.

ON Semiconductor

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Datasheet Details

Part number	A2222SG
Manufacturer	ON Semiconductor
File Size	242.63 KB
Description	Bipolar Transistor
Datasheet	A2222SG Datasheet
Additional preview pages of the A2222SG datasheet.

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A2222 - Bipolar Transistor

Full PDF Text Transcription

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Ordering number : ENA1799B 2SA2222SG Bipolar Transistor –50V, –10A, Low VCE(sat) PNP TO-220F-3FS http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers Features • Adoption of MBIT process • Large current capacity (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.

Published: Dec 24, 2020 |