ATP103
ATP103 is P-Channel Power MOSFET manufactured by onsemi.
Features
- Low ON-resistance
- Slim package
- Halogen free pliance
- Large current
- 4.5V drive
- Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse)
- 1
Avalanche Current
- 2
Note :- 1 VDD=--10V, L=100μH, IAV=--28A
- 2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings --30 ±20 --55
--165 50
150 --55 to +150
57 --28
Unit V V A A W °C °C m J A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7057-001
6.5 4
1.5 0.4
ATP103-TL-H
4.6 2.6
Product & Package Information
- Package
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