ATP106
ATP106 is P-Channel Power MOSFET manufactured by onsemi.
Features
- Low ON-resistance
- Slim package
- Halogen free pliance
- Large current
- 4.5V drive
- Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse)
- 1
Avalanche Current
- 2
Note :- 1 VDD=--10V, L=200μH, IAV=--15A
- 2 L≤200μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings --40 ±20 --30 --90 40 150
--55 to +150 30
--15
Unit V V A A W °C °C m J A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses...
