ATP108 - P-Channel Power MOSFET

Features

Low ON-resistance.
Slim package.
Halogen free compliance.
Large current.
4.5V drive.
Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV.

ON Semiconductor

Datasheet Details

Part number	ATP108
Manufacturer	ON Semiconductor
File Size	252.93 KB
Description	P-Channel Power MOSFET
Datasheet	ATP108 Datasheet
Additional preview pages of the ATP108 datasheet.

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Full PDF Text Transcription

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Ordering number : ENA1604A ATP108 P-Channel Power MOSFET –40V, –70A, 10.4mΩ, Single ATPAK http://onsemi.com Features • Low ON-resistance • Slim package • Halogen free compliance • Large current • 4.

Published: Apr 29, 2017 |