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ATP113 - P-Channel Power MOSFET

Features

  • ON.
  • Resistance RDS(on)1 = 22.5 mW (typ).
  • 4 V Drive.
  • Protection Diode in.
  • Input Capacitance Ciss = 2400 pF (typ).
  • This Device is a Pb.
  • Free and Halogen Free.

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Datasheet Details

Part number ATP113
Manufacturer ON Semiconductor
File Size 170.99 KB
Description P-Channel Power MOSFET
Datasheet download datasheet ATP113 Datasheet
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Full PDF Text Transcription

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MOSFET – Power, P-Channel, Single ATPAK -60 V, -35 A, 29.5 mW ATP113 Features • ON−Resistance RDS(on)1 = 22.
Published: |