ATP212 - N-Channel Power MOSFET

onsemi

Key Features

Low ON-resistance.
4V drive.
Halogen free compliance.
Large current.
Slim package.
Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 Avalanche Current.
2 Note :.
1 V.

ATP212 n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	ATP212
Manufacturer	onsemi
File Size	252.81 KB
Description	N-Channel Power MOSFET
Datasheet	ATP212 Datasheet

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Full PDF Text Transcription (Reference)

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Ordering number : ENA1507A ATP212 N-Channel Power MOSFET 60V, 35A, 23mΩ, Single ATPAK http://onsemi.com Features • Low ON-resistance • 4V drive • Halogen free compliance • Large current • Slim package • Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note :*1 VDD=10V, L=100μH, IAV=18A *2 L≤100μH, Single pulse EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 35 105 40 150 --55 to +150 19 18 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.