ATP214 - N-Channel Power MOSFET

onsemi

Key Features

ON-resistance RDS(on)1=6.2mΩ(typ. ).
4V drive.
Protection diode in.
Input Capacitance Ciss=4850pF(typ. ).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 Avalanche Current.

ATP214 n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	ATP214
Manufacturer	onsemi
File Size	254.86 KB
Description	N-Channel Power MOSFET
Datasheet	ATP214 Datasheet

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Full PDF Text Transcription (Reference)

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Ordering number : ENA1712A ATP214 N-Channel Power MOSFET 60V, 75A, 8.1mΩ, Single ATPAK http://onsemi.com Features • ON-resistance RDS(on)1=6.2mΩ(typ.) • 4V drive • Protection diode in • Input Capacitance Ciss=4850pF(typ.