ATP218 - N-Channel Power MOSFET

Datasheet Summary

Features

ON-resistance RDS(on)1=2.9mΩ(typ. ).
2.5V drive.
Protection diode in.
Input Capacitance Ciss=6600pF(typ. ).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 Avalanche Current.

ON Semiconductor

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Datasheet Details

Part number	ATP218
Manufacturer	ON Semiconductor
File Size	261.86 KB
Description	N-Channel Power MOSFET
Datasheet	ATP218 Datasheet
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Ordering number : EN8970A ATP218 N-Channel Power MOSFET 30V, 100A, 3.8mΩ, Single ATPAK http://onsemi.com Features • ON-resistance RDS(on)1=2.9mΩ(typ.) • 2.5V drive • Protection diode in • Input Capacitance Ciss=6600pF(typ.

Published: Nov 6, 2015 |