Datasheet Summary
Switch-mode Schottky Power Rectifier
MBRF20100CTG
The Switch- mode Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low- voltage, high- frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Features
- Highly Stable Oxide Passivated Junction
- Very Low Forward Voltage Drop
- Matched Dual Die Construction
- High Junction Temperature Capability
- High dv/dt Capability
- Excellent Ability to Withstand Reverse Avalanche Energy Transients
- Guardring for Stress...