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B20100G - Schottky Power Rectifier

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low.
  • voltage, high.
  • frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features.
  • Highly Stable Oxide Passivated Junction.
  • Very Low Forward Voltage Drop.
  • Matched Dual Die Construction.
  • High Junction Temperature Capability.
  • High dv/dt Capability.
  • Excellent Ability to Withstand.

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Datasheet Details

Part number B20100G
Manufacturer onsemi
File Size 172.50 KB
Description Schottky Power Rectifier
Datasheet download datasheet B20100G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switch-mode Schottky Power Rectifier MBRF20100CTG The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop • Matched Dual Die Construction • High Junction Temperature Capability • High dv/dt Capability • Excellent Ability to Withstand Reverse Avalanche Energy Transients • Guardring for Stress Protection • Epoxy Meets UL 94 V−0 @ 0.125 in • Electrically Isolated. No Isolation Hardware Required.