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BAS40-06LT1 - SCHOTTKY BARRIER DIODE

Key Features

  • br>.
  • Gotanda, Shinagawa.
  • ku, Tokyo, Japan 141.
  • 8549 Phone: 81.
  • 3.
  • 5740.
  • 2745 Email: r14525@onsemi. com ON Semiconductor Website: http://onsemi. com For additional information, please contact your local Sales Representative. http://onsemi. com 4 BAS40.
  • 06LT1/D.

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BAS40-06LT1 Preferred Device Common Anode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com • Extremely Fast Switching Speed • Low Forward Voltage — 0.50 Volts (Typ) @ IF = 10 mAdc • Device Marking: L2 40 VOLTS SCHOTTKY BARRIER DIODE 3 1 2 MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Symbol VR Reverse Voltage Rating Value 40 Unit Volts THERMAL CHARACTERISTICS Symbol PF Characteristic Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Max 225 1.