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BC327, BC327-16, BC327-25, BC327-40
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Symbol VCEO VCES VEBO
IC PD
Value −45 −50 −5.0 −800 625 5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Power Dissipation @ TA = 25°C Derate above TA = 25°C
Operating and Storage Junction Temperature Range
PD TJ, Tstg
1.5 12 −55 to +150
W mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device.
BC327-25 Datasheet
