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BC327, BC327-16, BC327-25, BC327-40
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS Rating
Collector −Emitter Voltage Collector −Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C Operating and Storage Junction Temperature Range
Symbol VCEO VCES VEBO
IC PD
Value −45 −50 −5.0 −800 625 5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
PD
1.5
W
12
mW/°C
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device.
BC327G Datasheet
