BC489 - High Current Transistors

onsemi

Key Features

These are Pb.
Free Devices.

BC489 high current transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	BC489
Manufacturer	onsemi
File Size	76.88 KB
Description	High Current Transistors
Datasheet	BC489 Datasheet

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Other Datasheets by onsemi

Part Number	Description
BC489A	High Current Transistors
BC487	High Current Transistors
BC487B	High Current Transistors
BC488B	High Current Transistors
BC447	High Voltage Transistors

Full PDF Text Transcription (Reference)

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BC489, BC489A High Current Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC PD 80 Vdc 80 Vdc 5.0 Vdc 0.5 Adc 625 mW 5.0 mW/°C PD 1.5 W 12 mW/°C TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.