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BC559 - PNP Epitaxial Silicon Transistor

Key Features

  • Switching and Amplifier.
  • High.
  • Voltage: BC556, VCEO =.
  • 65 V.
  • Low.
  • Noise: BC559, BC560.
  • Complement to BC546, BC547, BC548, BC549, and BC550.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number BC559
Manufacturer onsemi
File Size 247.16 KB
Description PNP Epitaxial Silicon Transistor
Datasheet download datasheet BC559 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PNP Epitaxial Silicon Transistor BC556, BC557, BC558, BC559, BC560 Features • Switching and Amplifier • High−Voltage: BC556, VCEO = −65 V • Low−Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector - Base Voltage VCBO V BC556 −80 BC557 / BC560 −50 BC558 / BC559 −30 Collector - Emitter Voltage VCEO V BC556 −65 BC557 / BC560 −45 BC558 / BC559 −30 Emitter - Base Voltage VEBO −5 V Collector Current (DC) IC −100 mA Peak Collector Current (Pulse) ICP −200 mA Peak Base Current (Pulse) IBP −200 mA Junction Temperature TJ 150 °C Storage Temperature Range TSTG −65 to