BC560C - PNP Epitaxial Silicon Transistor

onsemi

Key Features

Switching and Amplifier.
High.
Voltage: BC556, VCEO =.
65 V.
Low.
Noise: BC559, BC560.
Complement to BC546, BC547, BC548, BC549, and BC550.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant.

BC560C pnp epitaxial silicon transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	BC560C
Manufacturer	onsemi
File Size	202.56 KB
Description	PNP Epitaxial Silicon Transistor
Datasheet	BC560C Datasheet

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Other Datasheets by onsemi

Part Number	Description
BC560	PNP Epitaxial Silicon Transistor
BC516	PNP Darlington Transistor
BC517	NPN Darlington Transistor
BC546	NPN Epitaxial Silicon Transistor
BC546B	Amplifier Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PNP Epitaxial Silicon Transistor BC556, BC557, BC558, BC559, BC560 Features • Switching and Amplifier • High−Voltage: BC556, VCEO = −65 V • Low−Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector - Base Voltage VCBO V BC556 −80 BC557 / BC560 −50 BC558 / BC559 −30 Collector - Emitter Voltage VCEO V BC556 −65 BC557 / BC560 −45 BC558 / BC559 −30 Emitter - Base Voltage VEBO −5 V Collector Current (DC) IC −100 mA Peak Collector Current (Pulse) ICP −200 mA Peak Base Current (Pulse) IBP −200 mA Junction Temperature TJ 150 °C Storage Temperature Range TSTG −65 to