BC618 - Darlington Transistors

onsemi

Key Features

These are Pb.
Free Devices.

BC618 darlington transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	BC618
Manufacturer	onsemi
File Size	73.30 KB
Description	Darlington Transistors
Datasheet	BC618 Datasheet

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BC618 Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range Symbol Value Unit VCEO VCBO VEBO IC PD 55 Vdc 80 Vdc 12 Vdc 1.0 Adc 625 mW 5.0 mW/°C PD 1.5 W 12 mW/°C TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.