Datasheet Summary
Darlington Transistors
NPN Silicon
Features
- These are Pb- Free Devices-
MAXIMUM RATINGS Rating
Collector
- Emitter Voltage Collector
- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range
Symbol Value
Unit
VCEO VCBO VEBO
IC PD
Vdc
Vdc
Vdc
Adc
625 mW
5.0 mW/°C
12 mW/°C
TJ, Tstg
- 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction- to- Ambient RqJA
°C/W
Thermal Resistance, Junction- to-...