BC636-16 - High Current Transistors

onsemi

Download the BC636-16 datasheet PDF. This datasheet also covers the BC636 variant, as both devices belong to the same high current transistors family and are provided as variant models within a single manufacturer datasheet.

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BC636-16 high current transistors by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BC636_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BC636-16
Manufacturer	onsemi
File Size	Direct Link
Description	High Current Transistors
Datasheet	BC636-16 Datasheet

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Other Datasheets by onsemi

Part Number	Description
BC636	PNP Epitaxial Silicon Transistor
BC635	High Current Transistors
BC637	High Current Transistors
BC638	PNP Epitaxial Silicon Transistor
BC639	High Current Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage Collector Current — Continuous www.DataSheet4U.com Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Symbol RθJA RθJC Value –45 –60 –80 –45 –60 –80 –5.0 –0.5 Unit Vdc Vdc Vdc Adc 625 mW 5.0 mW/°C 1.5 12 –55 to +150 Watts mW/°C °C Max Unit 200 °C/W 83.3 °C/W http://onsemi.