BC847CTT1 - General Purpose Transistors

onsemi

Download the BC847CTT1 datasheet PDF. This datasheet also covers the BC847ATT1 variant, as both devices belong to the same general purpose transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

NSV Prefix for Automotive and Other.

📥 Download Datasheet

BC847CTT1 general purpose transistors by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BC847ATT1_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BC847CTT1
Manufacturer	onsemi
File Size	59.16 KB
Description	General Purpose Transistors
Datasheet	BC847CTT1 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BC847CT	NPN general purpose Transistor	GME
BC847CT	NPN general purpose transistors	NXP
BC847CT	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR	Diodes Incorporated
BC847CT	NPN Silicon AF Transistors	Infineon Technologies AG
BC847CT	NPN Plastic Encapsulate Transistor	SeCoS

Other Datasheets by onsemi

Part Number	Description
BC847C	General Purpose Transistors
BC847CDXV6T1	Dual General Purpose Transistors
BC847CDXV6T1G	Dual General Purpose Transistors
BC847CDXV6T5	Dual General Purpose Transistors
BC847CDXV6T5G	Dual General Purpose Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

BC847ATT1, BC847BTT1, BC847CTT1 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−75/SOT−416 package which is designed for low power surface mount applications. Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Emitter Voltage VCEO 45 V Collector−Base Voltage VCBO 50 V Emitter−Base Voltage VEBO 6.0 V Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device.