BC848CDXV6T1G - Dual General Purpose Transistors

onsemi

Download the BC848CDXV6T1G datasheet PDF. This datasheet also covers the BC847CDXV6T1G variant, as both devices belong to the same dual general purpose transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

AEC.
Q101 Qualified and PPAP Capable.
S Prefix for Automotive and Other.

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BC848CDXV6T1G dual general purpose transistors by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BC847CDXV6T1G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BC848CDXV6T1G
Manufacturer	onsemi
File Size	123.95 KB
Description	Dual General Purpose Transistors
Datasheet	BC848CDXV6T1G Datasheet

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Other Datasheets by onsemi

Part Number	Description
BC848CDXV6T1	Dual General Purpose Transistors
BC848CDXV6T5	Dual General Purpose Transistors
BC848CDW1	Dual General Purpose Transistors
BC848C	General Purpose Transistors
BC848CLT1G	NPN Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications. Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol BC847 BC848 Unit Collector − Emitter Voltage VCEO 45 30 V Collector − Base Voltage VCBO 50 30 V Emitter − Base Voltage VEBO 6.0 5.0 V Collector Current − Continuous IC 100 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.