Datasheet Summary
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS Rating
Collector- Emitter Voltage
Emitter- Base Voltage
Collector Current
- Continuous
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol VCEO VEBO IC
Value
- 45
- 5.0
- 100
Unit Vdc Vdc mAdc
Symbol PD
RθJA
Max 225
1.8 556
Unit mW mW/°C °C/W
PD RθJA
300 mW
2.4 mW/°C 417 °C/W
TJ, Tstg
- 55 to +150
°C...
