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BCW69LT1
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol VCEO VEBO IC
Value −45 −5.0 −100
Unit Vdc Vdc mAdc
Symbol PD
RθJA
Max 225
1.8 556
Unit mW
mW/°C °C/W
PD RθJA
300 mW
2.4 mW/°C 417 °C/W
TJ, Tstg − 55 to +150
°C
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BCW69LT1 Datasheet
