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BD159G Plastic Medium-Power Silicon NPN Transistor
This device is designed for power output stages for television, radio, phonograph and other consumer product applications.
Features http://onsemi.com
• Suitable for Transformerless, Line−Operated Equipment • Thermopadt Construction Provides High Power Dissipation Rating •
for High Reliability These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC ICM IB PD 20 0.16 TJ, Tstg –65 to +150 W mW/_C _C Value 350 375 5.0 0.5 1.0 0.25 Unit Vdc Vdc Vdc Adc Adc Adc
0.
BD159G Datasheet
