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BF493S
High Voltage Transistor
PNP Silicon
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS Rating
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above = 25°C
Symbol VCEO VCBO VEBO
IC PD
Value −350 −350 −6.0 −500 625 5.0
Unit Vdc
Vdc Vdc
mAdc
mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD 1.5 W 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
BF493S Datasheet
