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BSR16 - PNP Epitaxial Silicon Transistor

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23 (TO 236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2 onsemi and are trademarks of Semiconduc

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Datasheet Details

Part number BSR16
Manufacturer onsemi
File Size 169.42 KB
Description PNP Epitaxial Silicon Transistor
Datasheet download datasheet BSR16 Datasheet

Full PDF Text Transcription (Reference)

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PNP Epitaxial Silicon Transistor BSR16 PNP General Purpose Amplifier • This Device Designed for Use as General Purpose Amplifier and Switches Requiring Collector Currents to 500 mA • Sourced from Process 63 • See BCW68G for Characteristics ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.) Symbol Parameter Value Unit VCEO VCBO VEBO IC TJ, TST Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Operating and Storage Junction Temperature Range −60 V −60 V −5.0 V −800 mA −55 ~ +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1.