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PNP Epitaxial Silicon Transistor
BSR16
PNP General Purpose Amplifier
• This Device Designed for Use as General Purpose Amplifier and
Switches Requiring Collector Currents to 500 mA
• Sourced from Process 63 • See BCW68G for Characteristics
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.)
Symbol
Parameter
Value
Unit
VCEO VCBO VEBO
IC TJ, TST
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Operating and Storage Junction Temperature Range
−60
V
−60
V
−5.0
V
−800
mA
−55 ~ +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1.