BSS84
Description
This P- channel enhancement- mode field- effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process minimizes on- state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low- voltage applications requiring a low- current high- side switch.
Features
- - 0.13 A,
- 50 V, RDS(on) = 10 W at VGS =
- 5 V
- Voltage- Controlled P- Channel Small- Signal Switch
- High- Density Cell Design for Low RDS(on)
- High Saturation Current
- This Device is Pb- Free and Halogen Free
DATA SHEET .onsemi.
SOT- 23- 3 CASE 318- 08
MARKING DIAGRAM
3 Drain
SPMG G
1 Gate
2 Source
SP = Specific Device Code
= Date Code-
= Pb- Free Package
(Note: Microdot may be in either location)
- Date Code orientation and/or position may vary depending...
