BTA12-600C4G Overview
BTA12-600C4G, BTA12-800C4G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high mutating di/dt are required.
BTA12-600C4G Key Features
- Blocking Voltage to 800 V
- On-State Current Rating of 12 Amperes RMS at 85°C
- Uniform Gate Trigger Currents in Three Quadrants
- High Immunity to dV/dt
- 100 V/ms minimum at 125°C
- Minimizes Snubber Networks for Protection
- Industry Standard TO-220AB Package
- High mutating dI/dt
- 6.0 A/ms minimum at 125°C
- Internally Isolated (2500 VRMS)
BTA12-600C4G Applications
- Blocking Voltage to 800 V