BTB08-800BW3G Datasheet | onsemi

.. BTB08-600BW3G, BTB08-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full‐wave ac control applications where high noise immunity and high mutating di/dt are required. Features http://onsemi. - ăBlocking Voltage to 800 V - ăOn‐State Current Rating of 8 Amperes RMS at 25°C - ăUniform Gate Trigger Currents in Three Quadrants - ăHigh Immunity to d V/dt - 2000 V/ms minimum at 125°C - ăMinimizes Snubber Networks for Protection - ăIndustry Standard TO‐220AB Package - ăHigh mutating d I/dt - 4 A/ms minimum at 125°C - ăThese are Pb-Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB08-600BW3G BTB08-800BW3G On‐State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non‐Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 10 ms) Non-Repetitive Surge Peak Off-State Voltage (TJ = 25°C, t = 10ms) Peak Gate Current (TJ = 125°C, t = 20ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 8.0 90 A A Value Unit V TRIACS 8 AMPERES RMS 600 thru 800 VOLTS MT2 G 4 MT1 MARKING DIAGRAM TO-220AB CASE 221A STYLE 4 BTB08-x BWG AYWW I2t VDSM/ VRSM IGM PGM PG(AV) TJ Tstg 36 VDSM/VRSM +100 4.0 20 1.0 -ā40 to +125 -ā40 to +150 A2sec V A W W °C °C x A Y WW G = 6 or 8 = Assembly Location = Year = Work Week = Pb-Free Package PIN ASSIGNMENT 1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be...