BUL642D2
BUL642D2 is High Gain Bipolar NPN Transistor manufactured by onsemi.
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BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector- Emitter and Built- in Efficient Antisaturation Network
The BUL642D2 is a state- of- the- art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application. A new development process brings avalanche energy capability, making the device extremely rugged.
Features http://onsemi.
3 AMPERES 825 VOLTS 75 WATTS POWER TRANSISTOR
- Low Base Drive Requirement
- High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V
- Extremely Low Storage Time Min/Max Guarantees Due to...
