C5706 - Bipolar Transistor

onsemi

Key Features

Adoption of FBET and MBIT processes.
Low collector-to-emitter saturation voltage Speciﬁcations ( ): 2SA2039 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCES VCEO VEBO IC ICP.
Large current capacitance.
High-speed switching.
High allowable power dissipation Conditions Ratings (--5.

C5706 bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	C5706
Manufacturer	onsemi
File Size	424.64 KB
Description	Bipolar Transistor
Datasheet	C5706 Datasheet

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Ordering number : EN6912D 2SA2039/2SC5706 Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, ﬂash Features • Adoption of FBET and MBIT processes • Low collector-to-emitter saturation voltage Speciﬁcations ( ): 2SA2039 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCES VCEO VEBO IC ICP • Large current capacitance • High-speed switching • High allowable power dissipation Conditions Ratings (--50)100 (--50)100 (--)50 (--)6 (--)5 (--)7.5 Unit V V V V A A Continued on next page.