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CAT93C76B - 8Kb Microwire Serial EEPROM

General Description

The CAT93C76B is an 8

device which is configured as either registers of 16 bits (ORG pin at VCC or Not Connected) or 8 bits (ORG pin at GND).

Each register can be written (or read) serially by using the DI (or DO) pin.

Key Features

  • High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V).
  • 1.8 V (1.65 V.
  • ) to 5.5 V Supply Voltage Range.
  • Selectable x8 or x16 Memory Organization.
  • Self.
  • timed Write Cycle with Auto.
  • clear.
  • Software Write Protection.
  • Power.
  • up Inadvertant Write Protection.
  • Low Power CMOS Technology.
  • 1,000,000 Program/Erase Cycles.
  • 100 Year Data Retention.
  • Industrial and Extended Temperature Ranges.
  • Sequential Read.
  • 8.
  • pin SOIC, T.

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Datasheet Details

Part number CAT93C76B
Manufacturer onsemi
File Size 347.04 KB
Description 8Kb Microwire Serial EEPROM
Datasheet download datasheet CAT93C76B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EEPROM Serial 8-Kb Microwire CAT93C76B Description The CAT93C76B is an 8−Kb Microwire Serial EEPROM memory device which is configured as either registers of 16 bits (ORG pin at VCC or Not Connected) or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C76B is manufactured using onsemi’s advanced CMOS EEPROM floating gate technology. The device is designed to endure 1,000,000 program/erase cycles and has a data retention of 100 years. The device is available in 8−pin SOIC, TSSOP and 8−pad UDFN packages. Features  High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V)  1.8 V (1.65 V*) to 5.