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CPH3362 - Power MOSFET

Key Features

  • On-resistance RDS(on)1=1.3Ω (typ).
  • 4V drive.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage VDSS VGSS Drain Current (DC) Drain Current (Pulse) Power Dissipation ID IDP PW10s, duty cycle1% PD When mounted on ceramic substrate (900mm20.8mm) Junction Temperature Tj Storage Temperature Tstg This product is designed to “ESD immunity < 200V.
  • ”, so please take c.

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Datasheet Details

Part number CPH3362
Manufacturer onsemi
File Size 443.92 KB
Description Power MOSFET
Datasheet download datasheet CPH3362 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA2321A CPH3362 Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel http://onsemi.com Features  On-resistance RDS(on)1=1.3Ω (typ)  4V drive  Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage VDSS VGSS Drain Current (DC) Drain Current (Pulse) Power Dissipation ID IDP PW10s, duty cycle1% PD When mounted on ceramic substrate (900mm20.8mm) Junction Temperature Tj Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Value 100 20 0.7 2.8 1 150 55 to +150 Unit V V A A W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device.