Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature
VDSS VGSS ID IDP PD Tch
PW≤10μs, duty cycle≤1%
Storage Temperature
Tstg
This pr.
Full PDF Text Transcription for CPH5617 (Reference)
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CPH5617. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : EN7370C CPH5617 N-Channel Power MOSFET 30V, 150mA, 3.7Ω, Dual CPH5 http://onsemi.com Features • Low ON-resistance • Ultrahigh-speed switching • 1.5V dri...
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om Features • Low ON-resistance • Ultrahigh-speed switching • 1.5V drive • Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings 30 ±10 150 600 0.
CPH5617 Datasheet
