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CPH6347 - Power MOSFET

Key Features

  • Low Gate Drive Voltage.
  • ESD Diode-Protected Gate.
  • Pb-Free, Halogen Free and RoHS Compliance VDSS.
  • 20V RDS(on) Max 39mΩ@.
  • 4.5V 66mΩ@.
  • 2.5V 102mΩ@.
  • 1.8V ID Max.
  • 6A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (900mm2.

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Datasheet Details

Part number CPH6347
Manufacturer onsemi
File Size 388.75 KB
Description Power MOSFET
Datasheet download datasheet CPH6347 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CPH6347 Power MOSFET –20V, 39mΩ, –6A, Single P-Channel www.onsemi.com Features • Low Gate Drive Voltage • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance VDSS −20V RDS(on) Max 39mΩ@ −4.5V 66mΩ@ −2.5V 102mΩ@ −1.8V ID Max −6A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) Junction Temperature PD Tj Storage Temperature Tstg Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol RθJA Value −20 ±12 −6 −24 Unit V V A A 1.6 150 −55 to +150 W °C °C Value Unit 78.