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CPH6350 - P-Channel Power MOSFET

Key Features

  • 4V drive.
  • Low ON-resistance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --30 ±20 --6 --24 1.6 150 --55 to +150 Unit V V A A W °C °C Stresses.

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Datasheet Details

Part number CPH6350
Manufacturer onsemi
File Size 168.18 KB
Description P-Channel Power MOSFET
Datasheet download datasheet CPH6350 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1529B CPH6350 P-Channel Power MOSFET –30V, –6A, 43mΩ, Single CPH6 http://onsemi.com Features • 4V drive • Low ON-resistance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --30 ±20 --6 --24 1.6 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.