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CPH6355 - Power MOSFET

Key Features

  • Low ON-Resistance.
  • 4V Drive.
  • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS.
  • 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID.
  • 3 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP.
  • 12 A Power Dissipation When mounted on ceramic substrate (1500mm2 × 0.8mm) Junction Temperature PD Tj 1.6 W 150 °C Storage Tempera.

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Datasheet Details

Part number CPH6355
Manufacturer onsemi
File Size 402.59 KB
Description Power MOSFET
Datasheet download datasheet CPH6355 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CPH6355 Power MOSFET –30V, 169mΩ, –3A, Single P-Channel www.onsemi.com Features • Low ON-Resistance • 4V Drive • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS −30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID −3 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP −12 A Power Dissipation When mounted on ceramic substrate (1500mm2 × 0.8mm) Junction Temperature PD Tj 1.6 W 150 °C Storage Temperature Tstg −55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (1500mm2 × 0.