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CPH6444 - MOSFET

Key Features

  • Low ON-resistance.
  • 4V drive.
  • Protection diode in.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings 60 ±20 4.5 18 1.6 150 --55 to +150.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1243C CPH6444 N-Channel Power MOSFET 60V, 4.5A, 78mΩ, Single CPH6 http://onsemi.com Features • Low ON-resistance • 4V drive • Protection diode in • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings 60 ±20 4.5 18 1.6 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.