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CPH6445 - N-Channel Power MOSFET

Key Features

  • 4V drive.
  • Low ON-resistance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10ms, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings 60 ±20 3.5 14 1.6 150 --55 to +150 Unit V V A A W °C °C Stres.

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Datasheet Details

Part number CPH6445
Manufacturer onsemi
File Size 490.74 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CPH6445 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1532B CPH6445 N-Channel Power MOSFET 60V, 3.5A, 117mΩ, Single CPH6 http://onsemi.com Features • 4V drive • Low ON-resistance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10ms, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings 60 ±20 3.5 14 1.6 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.