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D44C12 - Complementary Silicon Power Transistor

Key Features

  • ăLow Collector-Emitter Saturation Voltage - 0.5 V (Max).
  • ăHigh ft for Good Frequency Response.
  • ăLow Leakage Current.
  • ăPb-Free Packages are Available.
  • ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

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Datasheet Details

Part number D44C12
Manufacturer onsemi
File Size 69.36 KB
Description Complementary Silicon Power Transistor
Datasheet download datasheet D44C12 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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D45C12 (PNP), D44C12 (NPN) Complementary Silicon Power Transistor The D45C12 and D44C12 areĂfor general purpose driver or medium power output stages in CW or switching applications. Features •ăLow Collector-Emitter Saturation Voltage - 0.5 V (Max) •ăHigh ft for Good Frequency Response •ăLow Leakage Current •ăPb-Free Packages are Available* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Symbol Value Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Voltage VCEO 80 Vdc VCES 90 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current - Continuous Peak (Note 1) VEB 5.0 Vdc IC 4.0 Adc 6.