D44VH Datasheet | onsemi

ON Semiconductort plementary Silicon Power Transistors These plementary silicon power transistors are designed for high- speed switching applications, such as switching regulators and high frequency inverters. The devices are also well- suited for drivers for high power switching circuits. - Fast Switching - tf = 90 ns (Max) - Key Parameters Specified @ 100_C - Low Collector- Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A - plementary Pairs Simplify Circuit Designs ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector- Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector- Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current - Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ- Peak(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(2) Pulse Width v 6.0 ms, Duty Cycle v 50%. Symbol VCEO VCEV VEB IC ICM PD TJ, Tstg Symbol RθJC RθJA TL Value 80 100 7.0 15 20 83 0.67 - 55 to 150 Unit Vdc Vdc Vdc Adc Watts W/_C _C Max Unit 1.5 _C/W 62.5 _C/W 275 _C NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities. D45VH 15 AMPERE PLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS 83 WATTS CASE 221A- 09 TO- 220AB © Semiconductor ponents Industries, LLC, 2001 March, 2001 - Rev. 2 Publication Order Number: D44VH/D D44VH D45VH ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ...