D45C12
D45C12 is Complementary Silicon Power Transistor manufactured by onsemi.
Features
- ăLow Collector-Emitter Saturation Voltage
- 0.5 V (Max)
- ăHigh ft for Good Frequency Response
- ăLow Leakage Current
- ăPb-Free Packages are Available-
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Voltage
VCEO 80 Vdc VCES 90 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
- Continuous
Peak (Note 1)
VEB 5.0 Vdc
IC 4.0 Adc 6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25°C Total Power Dissipation @ TA = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
PD TJ, Tstg
30 1.67
-ā55 to 150
W W/°C
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating Conditions is not implied. Extended exposure to stresses above the ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRemended Operating Conditions may affect device reliability.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction-to-Case
Rq JC
4.2 °C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction-to-Ambient
Rq JA
75 °C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8 in from Case for 5 Sec
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