DA121TT1
Advance Information Silicon Switching Diode http://onsemi. MAXIMUM RATINGS (TA = 25°C)
Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol VR IF IFM(surge) Max 80 200 500 Unit V m A m A 3 CATHODE 1 ANODE
Preferred Device
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation, FR- 4 Board (1) TA = 25°C Derated above 25°C Thermal Resistance, Junction to Ambient (1) Total Device Dissipation, FR- 4 Board (2) TA = 25°C Derated above 25°C Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range (1) FR- 4 @ Minimum Pad (2) FR- 4 @ 1.0 × 1.0 Inch Pad Symbol PD 225 1.8 RθJA PD 360 2.9 RθJA TJ, Tstg 345
- 55 to +150 m W m W/°C °C/W 555 m W m W/°C °C/W Max Unit
3 2 1 CASE 463 SOT- 416/SC- 75 STYLE 2
DEVICE MARKING
6A °C
ORDERING INFORMATION
Device DA121TT1 Package SOT- 416 Shipping 3000 / Tape & Reel
Preferred devices are remended choices for future use and best overall value.
This document...
