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DA121TT1
Advance Information Silicon Switching Diode
http://onsemi.com MAXIMUM RATINGS (TA = 25°C)
Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol VR IF IFM(surge) Max 80 200 500 Unit V mA mA 3 CATHODE 1 ANODE
Preferred Device
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation, FR–4 Board (1) TA = 25°C Derated above 25°C Thermal Resistance, Junction to Ambient (1) Total Device Dissipation, FR–4 Board (2) TA = 25°C Derated above 25°C Thermal Resistance, Junction to Ambient (2) Junction and Storage Temperature Range (1) FR–4 @ Minimum Pad (2) FR–4 @ 1.0 × 1.0 Inch Pad Symbol PD 225 1.8 RθJA PD 360 2.
DA121TT1 Datasheet
