DBD250G - 25.0A Single-Phase Bridge Rectifier

Features

Plastic molded structure.
Glass passivation for high reliability.
Peak reverse voltage : VRM=600V.
Average output current : IO=25.0A Specifications Absolute Maximum Ratings at Tc=25°C Parameter Peak Reverse Voltage Symbol VRM Average Output Current IO Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage IFSM Tj Tstg VIS Conditions Ta=40°C Ta=40°C, With 300✕300✕3.0mm3 Cu fin 50Hz sine wave, 1cycle Termi.

ON Semiconductor

Datasheet Details

Part number	DBD250G
Manufacturer	ON Semiconductor
File Size	284.76 KB
Description	25.0A Single-Phase Bridge Rectifier
Datasheet	DBD250G Datasheet
Additional preview pages of the DBD250G datasheet.

📁 Similar Datasheet

DBD10 - 1.0A Single-Phase Bridge Rectifier (Sanyo Semicon Device)

Other Datasheets by ON Semiconductor

DBD10G - 1.0A Single-Phase Bridge Rectifier

Full PDF Text Transcription

Click to expand full text

Ordering number : ENA1204A DBD250G 25.0A Single-Phase Bridge Rectifier http://onsemi.com Features • Plastic molded structure • Glass passivation for high reliability • Peak reverse voltage : VRM=600V • Average output current : IO=25.0A Specifications Absolute Maximum Ratings at Tc=25°C Parameter Peak Reverse Voltage Symbol VRM Average Output Current IO Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage IFSM Tj Tstg VIS Conditions Ta=40°C Ta=40°C, With 300✕300✕3.0mm3 Cu fin 50Hz sine wave, 1cycle Terminals tc case, AC 1 minute Raitings 600 6.0 25.0 400 150 --40 to +150 2 Unit V A A A °C °C kV Stresses exceeding those listed in the Maximum Ratings table may damage the device.

Published: Mar 15, 2016 |