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EB201D - High Cell Density MOSFET

Download the EB201D datasheet PDF. This datasheet also covers the EB201 variant, as both devices belong to the same high cell density mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 5.5 A. 3. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C, Tboard = 125°C max. 4. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EB201_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number EB201D
Manufacturer onsemi
File Size 148.26 KB
Description High Cell Density MOSFET
Datasheet download datasheet EB201D Datasheet

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Part Number Description
EB201 High Cell Density MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com EB201/D High Cell Density MOSFETs Low On–Resistance Affords New Design Options Prepared by: Kim Gauen and Wayne Chavez ON Semiconductor http://onsemi.com ENGINEERING BULLETIN Just a few years ago an affordable 60 V, 10 mΩ power transistor was a dream. After all, 10 mΩ is the resistance of about 20 cm of #22 gauge wire. Today a sub–10 mΩ power MOSFET is not only available, it is housed in a standard TO–220. Such are the advances that have occurred lately in “high cell density” power MOSFET technology. Furthermore, Motorola’s high cell density technology, HDTMOS®, brings other advantages such as greatly improved body diode performance. The technological advances are sufficiently great that they are fundamentally changing low voltage power transistor technology.