ECH8308 - P-Channel Power MOSFET

onsemi

Key Features

Best Suited for Load Switching.
1.8 V Drive.
Protection Diode in.
Low ON.
resistance.
This is a Pb.
Free and Halide Free Device.

ECH8308 p-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	ECH8308
Manufacturer	onsemi
File Size	151.71 KB
Description	P-Channel Power MOSFET
Datasheet	ECH8308 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
ECH8308	P-Channel Silicon MOSFET	Sanyo Semicon Device
ECH8302	P-Channel Silicon MOSFET	Sanyo Semicon Device
ECH8304	P-Channel Silicon MOSFET	Sanyo Semicon Device
ECH8305	General-Purpose Switching Device	Sanyo Semicon Device
ECH8306	P-Channel Silicon MOSFET	Sanyo Semicon Device

Other Datasheets by onsemi

Part Number	Description
ECH8309	P-Channel Power MOSFET
ECH8310	-30V -9A P-Channel Power MOSFET
ECH8315	P-Channel Power MOSFET
ECH8410	N-Channel Power MOSFET
ECH8419	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET www.onsemi.com MOSFET – Power, P-Channel, Single ECH8 -12 V, -10 A, 12.5 mW ECH8308 Features • Best Suited for Load Switching • 1.8 V Drive • Protection Diode in • Low ON−resistance • This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C) Parameter Symbol Conditions Ratings Unit Drain−to−Source Voltage VDSS −12 V Gate−to−Source Voltage VGSS ±10 V Drain Current (DC) Drain Current (Pulse) ID IDP PW ≤ 10 ms, duty cycle ≤ 1% −10 A −40 A Allowable Power Dissipation PD When mounted on 1.6 W ceramic substrate (900 mm2 × 0.8 mm) Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device.