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ECH8410 - N-Channel Power MOSFET

Key Features

  • Low ON-resistance.
  • 4V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings 30 ±20 12 60 1.6 150 --55 to +150 Un.

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Datasheet Details

Part number ECH8410
Manufacturer onsemi
File Size 217.23 KB
Description N-Channel Power MOSFET
Datasheet download datasheet ECH8410 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1331A ECH8410 N-Channel Power MOSFET 30V, 12A, 10mΩ, Single ECH8 http://onsemi.com Features • Low ON-resistance. • 4V drive. • Halogen free compliance. • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings 30 ±20 12 60 1.6 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.