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EFC6601R - N-Channel Power MOSFET

Key Features

  • 2.5V drive.
  • Common-drain type.
  • 2KV ESD HBM.
  • Protection diode in.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature VSSS VGSS IS ISP PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2×0.8mm) Ratings 24 ±12 13 60 2.0.

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Datasheet Details

Part number EFC6601R
Manufacturer onsemi
File Size 233.33 KB
Description N-Channel Power MOSFET
Datasheet download datasheet EFC6601R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA2151A EFC6601R N-Channel Power MOSFET 24V, 13A, 11.5mΩ, Dual EFCP http://onsemi.com Features • 2.5V drive • Common-drain type • 2KV ESD HBM • Protection diode in • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature VSSS VGSS IS ISP PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2×0.8mm) Ratings 24 ±12 13 60 2.0 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.