• Part: EFC6601R
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 233.33 KB
Download EFC6601R Datasheet PDF
onsemi
EFC6601R
Features - 2.5V drive - mon-drain type - 2KV ESD HBM - Protection diode in - Halogen free pliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature VSSS VGSS IS ISP PT Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2×0.8mm) Ratings 24 ±12 13 60 2.0 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7073-001 2.7 654 EFC6601R-TR Product & Package Information - Package : EFCP - JEITA, JEDEC :- - Minimum Packing Quantity : 5,000 pcs./reel Taping Type : TR Marking 0.65 1.81...