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EFC6612R - Power MOSFET

Key Features

  • 2.5V drive.
  • Protection diode in.
  • Halogen free compliance.
  • Common-drain type.
  • 2KV ESD HBM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA2329A EFC6612R Power MOSFET 20V, 5.1mΩ, 23A, Dual N-Channel http://onsemi.com Features  2.5V drive  Protection diode in  Halogen free compliance  Common-drain type  2KV ESD HBM Applications  Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Source to Source Voltage VSSS Gate to Source Voltage VGSS Source Current (DC) IS Source Current (Pulse) Total Dissipation ISP PW100s, duty cycle1% PT When mounted on ceramic substrate (5000mm20.8mm) Junction Temperature Tj Storage Temperature Tstg Value 20 12 23 100 2.5 150 55 to +150 Unit V V A A W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device.