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EGP10B - High-Efficiency Rectifier

This page provides the datasheet information for the EGP10B, a member of the EGP10A High-Efficiency Rectifier family.

Datasheet Summary

Description

AXIAL LEAD / DO

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Features

  • Superfast Recovery Time for High Efficiency.
  • Low Forward Voltage, High Current Capability.
  • Low Leakage Current.
  • High Surge Current Capability.

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Datasheet preview – EGP10B

Datasheet Details

Part number EGP10B
Manufacturer ON Semiconductor
File Size 148.90 KB
Description High-Efficiency Rectifier
Datasheet download datasheet EGP10B Datasheet
Additional preview pages of the EGP10B datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Rectifier, High Efficiency, Glass Passivated, 1.0 A EGP10B - EGP10K Features  Superfast Recovery Time for High Efficiency  Low Forward Voltage, High Current Capability  Low Leakage Current  High Surge Current Capability ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Value Unit IO If(surge) Average Rectified Current 0.375” lead length @ TL = 75_C Peak Forward Surge Current 8.3 ms single half−sine−wave Superimposed on rated load (JEDEC method) 1.0 A 30 A PD Total Device Dissipation Derate above 25_C 2.5 W 17 mWC IC Thermal Resistance, Junction to Ambient 50 TJ, TSTG Junction and Storage Temperature Range −65~150 C/W C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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